Press Releases

February 16, 2017

OSI Laser Diode Introduces InGaAs Avalanche Photodiode

OSI Laser Diode Introduces InGaAs Avalanche Photodiode

New LAPD 3050 avalanche photodiode module is ideal for light level detection and signal-transmission applications.

EDISON, N.J. - Feb. 15, 2017 - PRLog—OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or signal transmission applications.  The new 50 µm active area device features low dark current, low back reflection, and high speed (2.5 Ghz) in a miniature package.  With spectral response from 1000 nm to 1650 nm at 25 degrees C, the typical operational wavelength is 1550 nm.

The APD is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail. The overload-tolerant LAPD 3050 device is ideal for use in optical time-domain reflectometers (OTDRs), line receivers, and long haul applications. The breakdown voltage is from 50 V (min.) to 70 V (max.) and operating and storage temperatures range from -40 degrees C to +85 degrees C.